M29F010B |
RFQ for M29F010B Required Field |
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| Technical/Catalog Information | M29F010B70N1 |
| Vendor | STMicroelectronics |
| Category | Integrated Circuits (ICs) |
| Memory Type | FLASH - Nor |
| Memory Size | 1M (128K x 8) |
| Speed | 70ns |
| Interface | Parallel |
| Package / Case | 32-TSOP |
| Packaging | Tray |
| Voltage - Supply | 4.5 V ~ 5.5 V |
| Operating Temperature | 0°C ~ 70°C |
| Format - Memory | FLASH |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | M29F010B70N1 M29F010B70N1 |
| Product | Manufacturers | Pack | D/C |
| M29F010B | - | PLCC | - |
The M29F010B is a 1 Mbit (128Kb x8) non-volatilememory that can be read, erased and repro-grammed. These operations can be performed us-ing a single 5V supply. On power-up the memorydefaults to its Read mode where it can be read inthe same way as a ROM or EPROM.
The memory is divided into blocks that can beerased independently so it is possible to preservevalid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are writ-ten to the Command Interface of the memory. Anon-chip Program/Erase Controller simplifies theprocess of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Chip Enable, Output Enable and Write Enable sig-nals control the bus operation of the memory.They allow simple connection to most micropro-c essors, often without additional logic. The memory is offered in PLCC32, TSOP32 (8 x20mm) packages and it is supplied with all the bits erased (set to '1').In order to meet environmental requirements, SToffers the M29F010B in ECOPACK®packages.
ECOPACK packages are Lead-free. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97.
Features |
| SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONSACCESS TIME: 45nsPROGRAMMING TIME8µs per Byte typical8 UNIFORM 16 KBytes MEMORY BLOCKSPROGRAM/ERASE CONTROLLEREmbedded Byte Program algorithmEmbedded Multi-Block/Chip Erase algorithmStatus Register Polling and Toggle BitsERASE SUSPEND and RESUME MODESRead and Program another Block duringErase SuspendUNLOCK BYPASS PROGRAM COMMANDFaster Production/Batch ProgrammingLOW POWER CONSUMPTIONStandby and Automatic Standby100,000 PROGRAM/ERASE CYCLES per BLOCK20 YEARS DATA RETENTIONDefectivity below 1 ppm/yearELECTRONIC SIGNATUREManufacturer Code: 20hDevice Code: 20hECOPACK®PACKAGES AVAILABLE |
| Symbol | Parameter | Value | Unit |
| T A | Ambient Operating Temperature (Temperature Range Option 1) | 0 to 70 | °C |
| Ambient Operating Temperature (Temperature Range Option 6) | 40 to 85 | °C | |
| Ambient Operating Temperature (Temperature Range Option 3) | 40 to 125 | °C | |
| T BIAS | Temperature Under Bias | 50 to 125 | °C |
| T STG | Storage Temperature | 65 to 150 | °C |
| V IO (2) | Input or Output Voltage | 0.6 to 6 | V |
| V CC | Supply Voltage | 0.6 to 6 | V |
| V ID | Identification Voltage | 0.6 to 13.5 | V |
